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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2757GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2757GR is Dual N-channel MOS Field Effect
Transistors designed for switching application.
8
5
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
FEATURES
? Low on-state resistance
R DS(on)1 = 36.0 m Ω MAX. (V GS = 10 V, I D = 3.0 A)
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
R DS(on)2 = 50.0 m Ω MAX. (V GS = 4.5 V, I D = 3.0 A)
? Low gate charge
1
5.37 MAX.
4
6.0 ± 0.3
4.4
0.8
Q G = 10 nC TYP. (V GS = 10 V)
? Built-in G-S protection diode
? Small and surface mount package (Power SOP8)
1.27 0.78 MAX.
0.5 ± 0.2
0.10
ORDERING INFORMATION
0.40
+0.10
–0.05
0.12 M
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ PA2757GR-E1-AT
μ PA2757GR-E2-AT
Note
Note
Pure Sn
Tape 2500
p/reel
Power SOP8
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Body
Gate
Gate
Protection
Diode
Remark
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. V ESD ± 600 V TYP. (C = 100 pF, R = 1.5 k Ω )
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18206EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
2006, 2007
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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